SiC功率模块封装技术及展望

doi:10.19562/j.chinasae.qcgc.2022.04.018

Abstract

Abstract:

The integration， high-frequency， and high-efficiency for SiC MOSFET devices set a higher requirement on the packaging form and processes of power module. In this paper， the structural optimization and technological innovations of packaging forms in recent years are summarized， including the influence of the length， width， and number of metal bonding wires of bonded power modules on parasitic inductance， and the effects of the area and height of the ceramic layer in direct bonded copper ceramic substrates on parasitic capacitance， and the achievements in parasitic parameter optimization by using stacked commutation technology. The influences of the thickness and shape of the buffer layer of the double-sided heat dissipation structure on the heat dissipation indicator， stress and deformation are reviewed. The failure mechanism and solving measures of power modules are summed up， providing references for the safe operation of the module. Finally， the requirements and key issues of advanced silver sintering technologies are discussed， with the development direction of sintering packaging technologies and materials forecasted.

Key words: power module, module packaging, failure mechanism, double-sided heat dissipation, sintering packaging, silver sintering technology, parasitic parameters

William Cai,Maotong Yang,Yang Liu,Daohui Li. SiC Power Module Packaging Technologies and Prospects[J].Automotive Engineering, 2022, 44(4): 638-648.

Figures/Tables 21

References 39

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模块	宽度w_i /mm	厚度h_i /mm
芯片	4.25	0.38
芯片连接层	4.25	0.08
DBC上铜	8.25	0.30
陶瓷	10.25	0.63
DBC下铜	8.25	0.30
DBC连接层	8.25	0.10
基板	14.25	2.00

金属垫块结构	银烧结层热应力	芯片热应力	钼片热应力
无金属垫块	120	103
单层金属垫块	122	94	69
双层金属垫块	79	67	68

SiC Power Module Packaging Technologies and Prospects

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References 39

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