SiC功率模块封装技术及展望

doi:10.19562/j.chinasae.qcgc.2022.04.018

摘要/Abstract

摘要：

SiC MOSFET器件的集成化、高频化和高效化需求，对功率模块封装形式和工艺提出了更高的要求。本文中总结了近年来封装形式的结构优化和技术创新，包括键合式功率模块的金属键合线长度、宽度和并联数量对寄生电感的影响，直接覆铜（DBC）的陶瓷基板中陶瓷层的面积和高度对寄生电容的影响，以及采用叠层换流技术优化寄生参数等成果；综述了双面散热结构的缓冲层厚度和形状对散热指标和应力与形变的影响；汇总了功率模块常见失效机理和解决措施，为模块的安全使用提供参考。最后探讨了先进烧结银技术的要求和关键问题，并展望了烧结封装技术和材料的发展方向。

关键词: 功率模块, 模块封装, 失效机理, 双面散热, 烧结封装, 银烧结技术, 寄生参数

Abstract:

The integration， high-frequency， and high-efficiency for SiC MOSFET devices set a higher requirement on the packaging form and processes of power module. In this paper， the structural optimization and technological innovations of packaging forms in recent years are summarized， including the influence of the length， width， and number of metal bonding wires of bonded power modules on parasitic inductance， and the effects of the area and height of the ceramic layer in direct bonded copper ceramic substrates on parasitic capacitance， and the achievements in parasitic parameter optimization by using stacked commutation technology. The influences of the thickness and shape of the buffer layer of the double-sided heat dissipation structure on the heat dissipation indicator， stress and deformation are reviewed. The failure mechanism and solving measures of power modules are summed up， providing references for the safe operation of the module. Finally， the requirements and key issues of advanced silver sintering technologies are discussed， with the development direction of sintering packaging technologies and materials forecasted.

Key words: power module, module packaging, failure mechanism, double-sided heat dissipation, sintering packaging, silver sintering technology, parasitic parameters

蔡蔚,杨茂通,刘洋,李道会. SiC功率模块封装技术及展望[J]. 汽车工程, 2022, 44(4): 638-648.

William Cai,Maotong Yang,Yang Liu,Daohui Li. SiC Power Module Packaging Technologies and Prospects[J]. Automotive Engineering, 2022, 44(4): 638-648.

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模块	宽度w_i /mm	厚度h_i /mm
芯片	4.25	0.38
芯片连接层	4.25	0.08
DBC上铜	8.25	0.30
陶瓷	10.25	0.63
DBC下铜	8.25	0.30
DBC连接层	8.25	0.10
基板	14.25	2.00

金属垫块结构	银烧结层热应力	芯片热应力	钼片热应力
无金属垫块	120	103
单层金属垫块	122	94	69
双层金属垫块	79	67	68